Dynamic magnetic information storage or retrieval – Head – Magnetoresistive reproducing head
Reexamination Certificate
2011-02-11
2011-11-08
Negron, Daniell L (Department: 2627)
Dynamic magnetic information storage or retrieval
Head
Magnetoresistive reproducing head
C360S324000
Reexamination Certificate
active
08054588
ABSTRACT:
A tunnel magnetoresistive element includes a laminate including a pinned magnetic layer, an insulating barrier layer, and a free magnetic layer. The insulating barrier layer is composed of Ti—Mg—O or Ti—O. The free magnetic layer includes an enhancement sublayer, a first soft magnetic sublayer, a nonmagnetic metal sublayer, and a second soft magnetic sublayer. For example, the enhancement sublayer is composed of Co—Fe, the first soft magnetic sublayer and the second soft magnetic sublayer are composed of Ni—Fe, and the nonmagnetic metal sublayer is composed of Ta. The total thickness of the average thickness of the enhancement sublayer and the average thickness of the first soft magnetic sublayer is in the range of 25 to 80 angstroms. Accordingly, the tunneling magnetoresistive element can consistently have a higher rate of resistance change than before.
REFERENCES:
patent: 6452385 (2002-09-01), Shimazawa et al.
patent: 6661623 (2003-12-01), Tsuchiya et al.
patent: 6785102 (2004-08-01), Freitag et al.
patent: 6927952 (2005-08-01), Shimizu et al.
patent: 7606009 (2009-10-01), Lin
patent: 2002/0051380 (2002-05-01), Kamiguchi et al.
patent: 2003/0137785 (2003-07-01), Saito
patent: 2003/0197987 (2003-10-01), Saito
patent: 2003/0227722 (2003-12-01), Freitag et al.
patent: 2005/0264951 (2005-12-01), Gill
patent: 2006/0262460 (2006-11-01), Ide et al.
patent: 2007/0047159 (2007-03-01), Zhao et al.
patent: 2006-261637 (2006-09-01), None
patent: 2006261637 (2006-09-01), None
Hanada Akio
Hasegawa Naoya
Ide Yosuke
Ishizone Hasahiko
Kobayashi Hidekezu
Alps Electric Co. ,Ltd.
Brinks Hofer Gilson & Lione
Garcia Carlos E
Negron Daniell L
LandOfFree
Tunneling magnetoresistive element including multilayer free... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Tunneling magnetoresistive element including multilayer free..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Tunneling magnetoresistive element including multilayer free... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4291087