Tunneling magnetoresistance (TMR) device, its manufacture...

Details Tunneling magnetoresistance (TMR) device, its manufacture... Tunneling magnetoresistance (TMR) device, its manufacture...

2011-03-11

2011-12-06

Klimowicz, Will J (Department: 2627)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

C360S324120

Reexamination Certificate

active

08072714

ABSTRACT:
A barrier layer is disposed over a pinned layer made of ferromagnetic material having a fixed magnetization direction, the barrier layer having a thickness allowing electrons to transmit therethrough by a tunneling phenomenon. A first free layer is disposed over the barrier layer, the first free layer being made of amorphous or fine crystalline soft magnetic material which changes a magnetization direction under an external magnetic field. A second free layer is disposed over the first free layer, the second free layer being made of crystalline soft magnetic material which changes a magnetization direction under an external magnetic field and being exchange-coupled to the first free layer. A tunneling magnetoresistance device is provided which has good magnetic characteristics and can suppress a tunnel resistance change rate from being lowered.

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