Tunneling magnetoresistance device semiconductor junction...

Details Tunneling magnetoresistance device semiconductor junction... Tunneling magnetoresistance device semiconductor junction...

2007-12-18

2007-12-18

Lee, Eugene (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C257S295000, C257S425000, C257S427000, C257SE21665

Reexamination Certificate

active

10505942

ABSTRACT:
A pin junction element (10) includes a ferromagnetic p-type semiconductor layer (11) and a n-type semiconductor layer (12) which are connected via an insulating layer (13), and which shows a tunneling magnetic resistance according to the magnetization of the ferromagnetic p-type semiconductor layer (11) and the magnetization of the ferromagnetic n-type semiconductor layer (12). In this pin junction element (10), an empty layer is formed with an applied bias, thereby generating tunnel current via an empty layer. As a result, it is possible to generate tunnel current even when adopting a thicker insulating layer than that of the conventional tunnel magnetic resistance element.

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