Tunneling magneto-resistive spin valve sensor with novel...

Details Tunneling magneto-resistive spin valve sensor with novel... Tunneling magneto-resistive spin valve sensor with novel...

2005-01-12

2010-06-22

Wellington, Andrea L (Department: 2627)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

C360S324200

Reexamination Certificate

active

07742261

ABSTRACT:
The conventional free layer in a TMR read head has been replaced by a composite of two or more magnetic layers, one of which is iron rich The result is an improved device that has a higher MR ratio than prior art devices, while still maintaining free layer softness and acceptable magnetostriction. A process for manufacturing the device is also described.

REFERENCES:
patent: 5896252 (1999-04-01), Kanai
patent: 6127045 (2000-10-01), Gill
patent: 6452204 (2002-09-01), Ishiwata et al.
patent: 6519124 (2003-02-01), Redon et al.
patent: 6529353 (2003-03-01), Shimazawa
patent: 6563682 (2003-05-01), Sugawara et al.
patent: 6842317 (2005-01-01), Sugita et al.
patent: 7390529 (2008-06-01), Li et al.
patent: 7390530 (2008-06-01), Wang et al.
patent: 7431961 (2008-10-01), Zhao et al.
patent: 2002/0135923 (2002-09-01), Gill
patent: 2004/0008454 (2004-01-01), Gill
patent: 2004/0047190 (2004-03-01), Odagawa et al.
patent: 2004/0109263 (2004-06-01), Suda et al.
patent: 2004/0184198 (2004-09-01), Tetsukawa et al.
patent: 2005/0201022 (2005-09-01), Horng et al.
patent: 2005/0243475 (2005-11-01), Heim
patent: 2005/0254181 (2005-11-01), Li et al.
patent: 2005/0264954 (2005-12-01), Li et al.
patent: 2006/0114621 (2006-06-01), Wang et al.
patent: 2006/0126231 (2006-06-01), Zhao et al.
patent: 2000-058941 (2000-02-01), None
patent: 2002-074626 (2002-03-01), None
Co-pending U.S. Appl. No. 11/034,113, filed Jan. 12, 2005, “Tunneling Magneto-Resistive Spin Valve Sensor with Novel Composite Free Layer”, assigned to the same assignee as the current invention.
Co-pending U.S. Appl. No. 10/999,826, filed Nov. 30, 2004, “Structure and Process for Composite Free Layer,” assigned to the same assignee as present invention.
Co-pending U.S. Appl. No. 10/854,651, filed May 26, 2004, “Improved Free Layer for CPP GMR Having Iron Rich NiFe”,assiged to the same assignee as present invention.
“Demonstrating a Tunneling Magneto-Resistive Read Head”, by Sang et al., IEEE Trans. on Mag., vol. 36, No. 5, Sep. 2000, pp. 2545-2548.
“Low-Resistance Tunnel Magnetoresistive Head,” by K. Ohashi et al. IEEE Trans. on Mag., Vol. 36, No. 5, Sep. 2000, pp. 2549-2553.
“Spin Dependent Tunnel Junctions for Memory and Read-Head Applications”, IEEE Trans. on Mag., vol. 36, No. 5, Sep. 2000, pp. 2796-2801.
Translation of Office Action—JP, Apr. 23, 2009, Headway Technologies, Inc.
Translation of Office Action—JP, Nov. 5, 2009, Headway Technologies Inc.

Affiliated with

Also associated with

Rating

Tunneling magneto-resistive spin valve sensor with novel... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Tunneling magneto-resistive spin valve sensor with novel..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Tunneling magneto-resistive spin valve sensor with novel... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4203348