Tunneling magnetic sensing element including enhancing layer...

Dynamic magnetic information storage or retrieval – Head – Magnetoresistive reproducing head

Reexamination Certificate

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C360S324120

Reexamination Certificate

active

07898776

ABSTRACT:
A tunneling magnetic sensing element is provided, in which an increase in the magnetostriction of a free magnetic layer is reduced and the rate of change in resistance is high. A laminate T1constituting the tunneling magnetic sensing element includes a portion in which a pinned magnetic layer, a barrier layer, and a free magnetic layer are disposed in that order from the bottom. An enhancing layer disposed on the barrier layer side of the free magnetic layer includes a first enhancing layer on the barrier layer side and a second enhancing layer on the soft magnetic layer side, and the Fe content of a CoFe alloy constituting the first enhancing layer is specified to be larger than the Fe content of the CoFe alloy of the second enhancing layer.

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Office Action issued in corresponding Japanese Patent Application No. 2006-212237; issued Dec. 16, 2008, Not translated.

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