Tunneling magnetic sensing element having two-layered hard...

Details Tunneling magnetic sensing element having two-layered hard... Tunneling magnetic sensing element having two-layered hard...

2008-05-07

2011-12-06

Renner, Craig A. (Department: 2627)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

Reexamination Certificate

active

08072712

ABSTRACT:
At both sides of an element portion, a first hard bias layer having a higher residual magnetization Mr and a second hard bias layer having a higher coercive force Hc are deposited in that order from the bottom with one end of the first hard bias layer being closed close to a free magnetic layer. A film thickness ratio of the first hard bias layer in a whole hard bias layer is from 35% to 75%. This stabilizes magnetization in the free magnetic layer to reduce asymmetry, thus enabling improvement in stability of reproducing characteristics including noise suppression.

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patent: 08-050709 (1996-02-01), None
patent: 08-287419 (1996-11-01), None

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