Tunneling magnetic sensing element having free layer...

Details Tunneling magnetic sensing element having free layer... Tunneling magnetic sensing element having free layer...

2011-03-15

2011-03-15

Blouin, Mark (Department: 2627)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

Reexamination Certificate

active

07907370

ABSTRACT:
A tunneling magnetic sensing element including an Mg—O insulating barrier which can maintain favorable soft-magnetic properties of a free magnetic layer and can have a high resistance change ratio (ΔR/R) compared to known tunnel magnetic sensing elements is disclosed, and a method of manufacturing such a tunneling magnetic sensing element is also disclosed. An enhance layer (second magnetic layer) composed of Co100-XFeXhaving a Fe composition ratio X of about 30 to 100 at % is disposed on the Mg—O insulating barrier. With this, the magnetostriction λ of the free magnetic layer can be reduced and the resistance change ratio (ΔR/R) can be increased.

REFERENCES:
patent: 6841395 (2005-01-01), Linn et al.
patent: 7266012 (2007-09-01), Saito et al.
patent: 7342753 (2008-03-01), Gill
patent: 7349187 (2008-03-01), Parkin
patent: 7443639 (2008-10-01), Parkin
patent: 7534626 (2009-05-01), Parkin
patent: 7595520 (2009-09-01), Horng et al.
patent: 2008/0023740 (2008-01-01), Horng et al.
patent: 2008/0152834 (2008-06-01), Pinarbasi
patent: 2009/0243007 (2009-10-01), Buttet et al.
patent: 2009/0244960 (2009-10-01), Saito et al.
patent: 2009/0325319 (2009-12-01), Horng et al.
patent: 2004-179183 (2004-06-01), None
patent: 2004-179187 (2004-06-01), None
patent: 2005-050907 (2005-02-01), None
patent: 2005-116888 (2005-04-01), None

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