Tunneling field effect transistor switch device

Details Tunneling field effect transistor switch device Tunneling field effect transistor switch device

2009-05-19

2011-11-08

Richards, N Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

C257S076000, C257S328000, C257S329000, C257SE31024

Reexamination Certificate

active

08053785

ABSTRACT:
A tunneling field effect transistor (TFET) device includes a semiconductor substrate having a layer of relatively intermediate bandgap semiconductor material, a layer of relatively low bandgap semiconductor material overlying the layer of relatively intermediate bandgap semiconductor material, and a layer of relatively high bandgap semiconductor material overlying the layer of relatively low bandgap semiconductor material. The TFET device includes a source region, a drain region, and a channel region defined in the semiconductor substrate. The TFET device also has a gate structure overlying at least a portion of the channel region. The source region is highly doped with an impurity dopant having a first conductivity type, and the drain region is highly doped with an impurity dopant having a second conductivity type. The layer of relatively low bandgap semiconductor material promotes tunneling at a first junction between the source region and the channel region, and the layer of relatively high bandgap semiconductor material inhibits tunneling at a second junction between the source region and the channel region.

REFERENCES:
patent: 2008/0290420 (2008-11-01), Yu et al.

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