Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission
Reexamination Certificate
2005-08-23
2005-08-23
Le, Dung A. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Low workfunction layer for electron emission
C257S011000, C257S163000, C313S309000, C313S310000
Reexamination Certificate
active
06933517
ABSTRACT:
An emitter includes an electron supply and a tunneling layer disposed on the electron supply. A cathode layer is disposed on the tunneling layer. A conductive electrode has multiple layers of conductive material. The multiple layers include a protective layer disposed on the cathode layer. The conductive electrode has been etched to define an opening thereby exposing a portion of the cathode layer.
REFERENCES:
patent: 4760567 (1988-07-01), Crewe
patent: 4923421 (1990-05-01), Brodie et al.
patent: 5086017 (1992-02-01), Lu
patent: 5142184 (1992-08-01), Kane
patent: 5374844 (1994-12-01), Moyer
patent: 5507676 (1996-04-01), Taylor et al.
patent: 5528103 (1996-06-01), Spindt et al.
patent: 5557596 (1996-09-01), Gibson et al.
patent: 5559342 (1996-09-01), Tsukamoto et al.
patent: 5578900 (1996-11-01), Peng et al.
patent: 5760417 (1998-06-01), Watanabe et al.
patent: 6010918 (2000-01-01), Marino et al.
patent: 6011356 (2000-01-01), Janning et al.
patent: 6023124 (2000-02-01), Chuman et al.
patent: 6033924 (2000-03-01), Pack et al.
patent: 6303504 (2001-10-01), Lin
patent: 6313043 (2001-11-01), Hattori
patent: 6781146 (2004-08-01), Chen et al.
patent: 6806488 (2004-10-01), Ramamoorthi et al.
patent: 6835947 (2004-12-01), Govyadinov et al.
patent: 0685869 (1995-12-01), None
patent: 0913849 (1999-05-01), None
patent: 1308980 (2003-05-01), None
patent: 02306520 (1990-12-01), None
patent: 2000331595 (2000-12-01), None
patent: WO01/80273 (2001-10-01), None
patent: WO 02/35897 (2002-05-01), None
Benning Paul J.
Chen Zhizhang
Novet Thomas
Ramamoorthi Sriram
Le Dung A.
Myers Timothy F.
LandOfFree
Tunneling emitters does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Tunneling emitters, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Tunneling emitters will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3470045