Tunneling electronic device

Details Tunneling electronic device Tunneling electronic device

1997-04-28

1999-08-31

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 20, H01L 2978, H01L 2988

Patent

active

059456868

ABSTRACT:
Laminated layers including semiconductor or metal thin layers and insulative thin layers are formed on a substrate and after the laminated layers are patterned, and the laminated layers are oxidized from their side to form an oxidized area. This way, a 0-dimensional quantum box or one-dimensional quantum line having fine tunnel junctions surrounded by the oxidized area and a 0-dimension quantum box or a one-dimensional quantum line made of semiconductor or metal area interposed between the oxidized area and the insulative thin layers are formed in the laminated layers.

REFERENCES:
patent: 5138405 (1992-08-01), Kuzuhara
patent: 5444267 (1995-08-01), Okada
patent: 5600163 (1997-02-01), Yano et al.
patent: 5710436 (1998-01-01), Tanamoto
patent: 5714766 (1998-02-01), Chen
Applied Physics, vol. 63, No. 12, 1994, pp. 1232-1238.
The Journal of Institute of Electronics, Information and Communication Engineers of Japan, vol. 11, 1994, pp. 1117-1124.
Journal of Vacuum Science and Technology, vol. B11, 1993, pp. 2532-2537.
1997 American Institute of Physics Letter, vol. 70, No. 3, Jan. 20, 1997, pp. 333-335.
1996 Electronic Materials Conference, Jun. 26-28, 1996.

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