Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2006-10-26
2009-02-10
Lindsay, Jr., Walter L (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S365000, C257SE29275, C438S157000, C438S158000
Reexamination Certificate
active
07488978
ABSTRACT:
A thin film transistor, a method for manufacturing the thin film transistor, and an organic electroluminescence display using the thin film transistor are disclosed. The thin film transistor includes a gate electrode, a semiconductor layer that overlaps the gate electrode, a first insulating layer disposed between the semiconductor layer and the gate electrode, and first and second electrodes that use the semiconductor layer as a channel, and are disposed at different layers. The thin film transistor further includes a second insulating layer disposed between the semiconductor layer and one of the first and second electrodes, and a first doping semiconductor layer disposed between the semiconductor layer and the other of the first and second electrodes.
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Brinks Hofer Gilson & Lione
Isaac Stanetta D
LG Display Co. Ltd.
Lindsay, Jr. Walter L
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