Tunneling diffusion barrier for local interconnect and polysilic

Details Tunneling diffusion barrier for local interconnect and polysilic Tunneling diffusion barrier for local interconnect and polysilic

1990-07-31

1991-11-12

James, Andrew J.

357 6, 357 51, 357 59, H01L 2348, H01L 4902, H01L 2702, H01L 2904

Patent

active

050652257

ABSTRACT:
A semiconductor device is described in which a conductive layer overlaps a dielectric layer forming a composite electrical device deposited over selected portions of a semiconductor substrate chemically isolating the conductive layer portion of the composite electrical device from the substrate, thereby preventing difffusion of dopant material through the dielectric layer into and out of the conductive layer while simultaneously allowing for tunneling of electrons through the dielectric layer to and from the conductive layer and the semiconductor substrate.

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patent: 4948755 (1990-08-01), Mo
R. Atlan, "Thin-Film Devices on Silicon Chip withstand up to 500.degree. C.," Electronics Review, Jan. 3, 1980, pp. 39-40.

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