Tunnel valve free layer stabilization system and method...

Details Tunnel valve free layer stabilization system and method... Tunnel valve free layer stabilization system and method...

2006-12-26

2006-12-26

Klimowicz, William J (Department: 2627)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

C360S324120

Reexamination Certificate

active

07154716

ABSTRACT:
A magnetic tunnel junction (MTJ) sensor system and a method for fabricating the same. A sensor includes a pinned layer, a free layer, and a tunnel barrier layer positioned between the pinned layer and the free layer. The pinned layer, the free layer, and the tunnel barrier layer define a track width. The pinned layer, the free layer, and the tunnel barrier layer are positioned between first and second lead layers. A pair of hard bias layers generate a hard bias magnetic field. Insulating layers are positioned between the hard bias layers and the first and second lead layers. In use, a sensor magnetic field generated by the current is opposite and substantially equal to the hard bias magnetic field at a center of the track width of the sensor.

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