Semiconductor device manufacturing: process – Having superconductive component
Patent
1996-09-27
1999-01-05
Graybill, David
Semiconductor device manufacturing: process
Having superconductive component
501329, H01L 2100
Patent
active
058562044
ABSTRACT:
A plurality of single crystal grains made of Bi.sub.2 Sr.sub.2 Ca.sub.1 Cu.sub.2 O.sub.8 which are heat treated at a temperature that is equal to or higher than the crystallization temperature of an oxide high-temperature superconductor made of Bi.sub.2 Sr.sub.2 Ca.sub.1 Cu.sub.2 O.sub.8 and are surrounded by a grain boundary are formed on a substrate made of a MgO single crystal. A convex portion having a sectional area of 400 .mu.m.sup.2 or less and a height which is equal to or less than ten times as much as a space between block layers of Bi.sub.2 Sr.sub.2 Ca.sub.1 Cu.sub.2 O.sub.8 is formed on the upper face portion of the single crystal grain. A first electrode made of Au is formed on the upper face of the convex portion of the single crystal grain, and a second electrode is formed in a region other than the convex portion in the single crystal grain. The first electrode is insulated from the second electrode by an insulating film made of CaF.sub.2.
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Adachi Hideaki
Higashino Hidetaka
Sakai Masahiro
Setsune Kentaro
Graybill David
Lebentritt Michael S.
Matsushita Electric - Industrial Co., Ltd.
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