Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device
Reexamination Certificate
2008-07-08
2008-07-08
Parker, Kenneth (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
C257SE43007
Reexamination Certificate
active
07397071
ABSTRACT:
A MISFET the channel region of which is a ferromagnetic semi-conductor has a feature that the drain current can be controlled by the gate voltage and a feature that the transfer conductance can be controlled by the relative directions of magnetization in the ferromagnetic channel region and the ferromagnetic source (or the ferromagnetic drain, or both the ferromagnetic source and ferromagnetic drain). As a result, binary information can be stored in the form of the relative magnetization directions, and the relative magnetization directions are electrically detected. If the magnetism is controlled by the electric field effect of the channel region of a ferromagnetic semiconductor, the current needed to rewrite the information can be greatly reduced. Thus, the MISFET can constitute a high-performance non-volatile memory cell suited to high-density integration.
REFERENCES:
patent: 5457335 (1995-10-01), Kuroda et al.
patent: 5659499 (1997-08-01), Chen et al.
patent: 5874760 (1999-02-01), Burns et al.
patent: 6069820 (2000-05-01), Inomata et al.
patent: 6753562 (2004-06-01), Hsu et al.
patent: 2002/0006058 (2002-01-01), Nakajima et al.
patent: 2004/0041217 (2004-03-01), Lee et al.
patent: 2004/0141367 (2004-07-01), Amano et al.
patent: 2005/0117617 (2005-06-01), Yoshida et al.
patent: 2006/0043443 (2006-03-01), Sugahara et al.
patent: A 11-238924 (1999-08-01), None
patent: A 2001-250998 (2001-09-01), None
patent: A 2003-78147 (2003-03-01), None
patent: A 2003-092412 (2003-03-01), None
LeClair. et al., “Large magnetoresistance using hybrid spin filter devices”, Applied Physics Letters, Jan. 28, 2002, vol. 80, No. 4, pp. 625 to 627.
Filip et al., “Spin-injection device based on EuS magnetic tunnel barriers” Applied Physics Letters, vol. 81, No. 10, pp. 1815-1817, Sep. 2, 2002.
LeClair et al., “Large Magnetoresistance using Hybrid Spin Filter Devices,” Applied Physics Letters, vol. 80, No. 4, pp. 625-627, Jan. 28, 2002.
Matsukura et al.,.“Control of Ferromagnetism in Filed-Effect Transistor of a Magnetic Semiconductor,” Physica E, vol. 12, pp. 351-355, 2002.
Sugawara et al., “Proposal of a Spin-Filter Transistor and its Application,” 30a-ZH-1, No. 3, pp. 1566, Mar. 27, 2003 with English translation.
Matsuno et al., “Reconfigurable Logic Devices Based on the Spin-Filter Transistor,” 30a-ZH-2, No. 3, pp. 1566, Mar. 27, 2003 with English translation.
Datta et al., “Electronic Analog of the Electro-Optic Modulator,” Appl. Phys. Lett., vol. 56, No. 7., pp. 665-667. Feb. 12, 1990.
Inomata, “Present and Future of Magnetic RAM Technology,” IEICE Trans. Electron., vol. E84-C, No. 6, pp. 740-746, Jun. 2001.
Ohno et al., “Electric-Field Control of Ferromagnetism,” Nature, vol. 408, pp. 944-946, Dec. 21-28, 2000.
Chiba et al., “Electrical Manipulation of Magnetization Reversal in a Ferromagnetic Semiconductor,” Science, vol. 301, pp. 943-945, Aug. 15, 2003.
Sugahara Satoshi
Tanaka Masaaki
Japan Science and Technology Agency
Oliff & Berridg,e PLC
Parker Kenneth
Valentine Jami M
LandOfFree
Tunnel transistor having spin-dependent transfer... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Tunnel transistor having spin-dependent transfer..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Tunnel transistor having spin-dependent transfer... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2780034