Active solid-state devices (e.g. – transistors – solid-state diode – Tunneling pn junction device – In three or more terminal device
Patent
1992-10-14
1996-12-31
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Tunneling pn junction device
In three or more terminal device
257 25, 257 30, 257 35, 257104, 257106, H01L 2906, H01L 29861, H01L 29866
Patent
active
055896960
ABSTRACT:
A tunnel transistor comprises a semiconductor film (27) between a gate isolating film (17) and parts of first (13) and second (15) semiconductor layers which are formed in a substrate (11) to serve as source and drain regions with a spacer region left therebetween and covered with the semiconductor film. The gate isolating film is over the part of the first semiconductor layer and is made of either an insulating material or a semiconductor material, each of which materials should have a wider forbidden bandwidth than a semiconductor material of the semiconductor film, such as silicon dioxide, silicon nitride, or aluminium nitride, or gallium phosphide for silicon, or AlGaAs fox gallium arsenide. A source electrode is formed on an uncovered area of the first semiconductor layer. The semiconductor film forms a tunnel junction with the first semiconductor layer and an ohmic junction with the second semiconductor layer, which junction may be either a homojunction or a heterojunction. The transistor can be of a submicron order and is operable as either of depletion and enhancement types of producing a great drain current at a high speed when supplied with no netavite gate voltage and with a gate voltage.
REFERENCES:
patent: 3390352 (1968-06-01), Kleinknecht
patent: 4884111 (1989-11-01), Nishino et al.
patent: 4935804 (1990-06-01), Ito et al.
patent: 4969019 (1990-11-01), Banerjee
patent: 5105247 (1992-04-01), Cavanaugh
patent: 5236896 (1993-08-01), Nakamura et al.
IEEE Electron Device Letters, vol. EDL8, No. 8, Aug. 1987, pp. 347-349, S. Banerjee et al, A New Three-Terminal Tunnel Device.
S. Banerjee et al., "A New Three-Terminal Tunnel Device", IEEE Electron Device Letters, vol. EDL-8, No. 8, Aug. 1987, pp. 347-349.
Crane Sara W.
NEC Corporation
Wallace Valencia M.
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