Active solid-state devices (e.g. – transistors – solid-state diode – With metal contact alloyed to elemental semiconductor type... – In pn junction tunnel diode
Patent
1994-09-08
1998-01-06
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
With metal contact alloyed to elemental semiconductor type...
In pn junction tunnel diode
257 20, 257105, 257194, 257289, 257410, 257411, H01L 2940, H01L 2976
Patent
active
057058270
ABSTRACT:
The tunnel transistor of the present invention has either a junction structure wherein a degenerated first semiconductor having one conduction type, a non-degenerated second semiconductor and a degenerated third semiconductor having the reverse conduction type to that of the first semiconductor are connected on a substrate or a laminated layer structure comprising a degenerated first semiconductor having one conduction type, a non-degenerated second semiconductor and a degenerated third semiconductor of the reverse conduction type to that of the first semiconductor all laminated on a part of a substrate. The tunnel transistor further includes a fourth semiconductor layer formed on an exposed surface of the second semiconductor, having a forbidden band wider than that of the second semiconductor and containing an ionized impurity therein, a gate electrode formed on the fourth semiconductor layer, and a pair of electrodes individually forming ohmic junctions to the first and third semiconductors. Due to the construction, even when the gate voltage is 0, electrons or positive holes are induced in the surface of the second semiconductor, and a tunnel current can be flowed between the source and the drain. Since control of the tunnel current can then be preformed by applying a reverse bias voltage between the gate and the drain, the leak current of the gate can be suppressed.
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Baba Toshio
Uemura Tetsuya
Carroll J.
NEC Corporation
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