Tunnel magnetoresistive sensor in which at least part of...

Details Tunnel magnetoresistive sensor in which at least part of... Tunnel magnetoresistive sensor in which at least part of...

2011-06-28

2011-06-28

Blouin, Mark (Department: 2627)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

Reexamination Certificate

active

07969693

ABSTRACT:
A tunnel magnetoresistive sensor includes a pinned magnetic layer, an insulating barrier layer formed of Mg—O, and a free magnetic layer. A barrier-layer-side magnetic sublayer constituting at least part of the pinned magnetic layer and being in contact with the insulating barrier layer includes a first magnetic region formed of CoFeB or FeB and a second magnetic region formed of CoFe or Fe. The second magnetic region is disposed between the first magnetic region and the insulating barrier layer.

REFERENCES:
patent: 7672088 (2010-03-01), Zhang et al.
patent: 7751156 (2010-07-01), Mauri et al.
patent: 7760474 (2010-07-01), Huai et al.
patent: 7764468 (2010-07-01), Sawada et al.
patent: 7800868 (2010-09-01), Gao et al.
patent: 7821747 (2010-10-01), Gill
patent: 2005-197764 (2005-07-01), None
patent: 2004-179667 (2007-06-01), None

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