Tunnel magnetoresistive effect element with limited electric...

Details Tunnel magnetoresistive effect element with limited electric... Tunnel magnetoresistive effect element with limited electric...

2011-03-29

2011-03-29

Davis, David D (Department: 2627)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

Reexamination Certificate

active

07916434

ABSTRACT:
A TMR effect element with sufficiently reduced element resistance and restricted popping noise is provided, which comprises a tunnel barrier layer formed primarily of a metal oxide including many electric charge sites. The electric charge sites density n and the mobility μ of electrons trapped due to the electric charge sites satisfy a relationship expressed by: 0<(ns1−1−ns2−1)−1·(μ0−μ)·(nμ)−1<0.2, where ns1and ns2are densities of tunnel electrons when an element resistance is a minimum and maximum respectively during reading signals and μ0is the mobility of electrons when not trapped.

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Japanese Patent Office Report dated Mar. 11, 2008.

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