Tunnel magnetoresistive effect element having a tunnel...

Dynamic magnetic information storage or retrieval – Head – Magnetoresistive reproducing head

Reexamination Certificate

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Reexamination Certificate

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07978443

ABSTRACT:
A TMR element includes a lower magnetic layer, an upper magnetic layer, and a tunnel barrier layer of crystalline insulation material sandwiched between the lower magnetic layer and the upper magnetic layer. The lower magnetic layer includes a first magnetic layer and a second magnetic layer sandwiched between the first magnetic layer and the tunnel barrier layer. The second magnetic layer is formed from a magnetic material containing at least one of Fe, Co and Ni.

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patent: A-2008-103661 (2008-05-01), None
patent: WO 2006/023018 (2006-03-01), None

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