Tunnel magnetoresistance element

Details Tunnel magnetoresistance element Tunnel magnetoresistance element

2007-05-22

2007-05-22

Bernatz, Kevin M. (Department: 1773)

Stock material or miscellaneous articles

Magnetic recording component or stock

Magnetic head

C428S813000, C360S324200

Reexamination Certificate

active

10478203

ABSTRACT:
By varying only the thickness of a known material having superior magnetic characteristics to increase spin polarization without changing the chemical composition, a tunnel magnetoresistive element capable of producing a larger magnetoresistive effect is provided. The tunnel magnetoresistive element includes an underlayer (nonmagnetic or antiferromagnetic metal film); an ultrathin ferromagnetic layer disposed on the underlayer; an insulating layer disposed on the ultrathin ferromagnetic layer; and a ferromagnetic electrode disposed on the insulating layer.

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Moodera, J., Nowak, J., Kinder, L., Tedrow, P., van de Veerdonk, R., Smits, B., van Kampen, M., Swagten, H., and de Jonge, W., Phys. Rev. Let., 83(15), Oct. 1999, 3029-3032.
JPO Abstract Translation of JP 2001-093119 A (Document ID: JP 2001093119 A)..
Shinji Yuasa, et al., “Kohinshitsu Kyojisei Tunnel Setsugo Soshi no Sakusei”, ETL NEWS, vol. 597, pp. 4-7 1990.

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