Tunnel magnetoresistance device with tunnel barrier layer...

Details Tunnel magnetoresistance device with tunnel barrier layer... Tunnel magnetoresistance device with tunnel barrier layer...

2005-04-07

2010-02-02

Renner, Craig A. (Department: 2627)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

Reexamination Certificate

active

07656622

ABSTRACT:
The TMR device has a structure including a lower electrode layer, a pinned layer, a tunnel barrier layer, a free layer, and an upper electrode layer which are successively formed on a substrate. The tunnel barrier layer has substantially a stoichiometric composition. The tunnel barrier layer may be a thin film of an oxide of AL formed by ALD method.

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