Tunnel junctions for long-wavelength VCSELs

Details Tunnel junctions for long-wavelength VCSELs Tunnel junctions for long-wavelength VCSELs

2006-01-03

2006-01-03

Tran, Thien F. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Tunneling pn junction device

Reexamination Certificate

active

06982439

ABSTRACT:
A tunnel junction device (102) with minimal hydrogen passivation of acceptors includes a p-type tunnel junction layer (106) of a first semiconductor material doped with carbon. The first semiconductor material includes aluminum, gallium, arsenic and antimony. An n-type tunnel junction layer (104) of a second semiconductor material includes indium, gallium, arsenic and one of aluminum and phosphorous. The junction between the p-type and an-type tunnel junction layers forms a tunnel junction (110).

REFERENCES:
patent: 6765238 (2004-07-01), Chang et al.
patent: 2004/0051113 (2004-03-01), Chang et al.
patent: 0715357 (1996-05-01), None
patent: 1401069 (2004-03-01), None
patent: WO03/073565 (2003-04-01), None
Introduction to Semiconductor Integrated Optics, Hans P. Zappe 1995 Artech House Inc. Chapter 3, pp. 60-61 and 198-199.
7thbiennial workshop onOrganometallic Vapor Phase Epitaxy, Apr. 2-6, 1995.
“InP/GaAsSb/InP and InP/GaAsSb/InGaAsP double heterojunction bipolar transistors with a carbon-doped base grown by organometallic chemical vapor desposition”, R. Bhat, Appl. Phys. Letters 68 (7) Feb. 12, 1996 pp. 985-987.
“Theory of band tails in heavily doped semiconductors”, Piet Van Mieghem, Rev. Mod. Phys. 64, 755-793.
“High efficiency long wavelength VCSELS on InP grown by MOCVD”, N. Nishiyama, Electronics Letters Mar. 6, 2003 vol. 39, No. 5.
Optical Processes In Semiconductors, J. Pankove, Prentice Hall, Inc. 1971 pps. 10-12, and 39-46.
“Long-wavelength VCSELs on InP grown by MOCVD”, N. Nishiyama, et al, Proceedings of SPIE vol. 5246, Aug. 2003, pp. 10-17.

Affiliated with

Also associated with

Rating

Tunnel junctions for long-wavelength VCSELs does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Tunnel junctions for long-wavelength VCSELs, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Tunnel junctions for long-wavelength VCSELs will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3551074