Tunnel junctions for long-wavelength VCSELs

Details Tunnel junctions for long-wavelength VCSELs Tunnel junctions for long-wavelength VCSELs

2005-08-23

2005-08-23

Tran, Thien F (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Tunneling pn junction device

Reexamination Certificate

active

06933539

ABSTRACT:
A tunnel junction device (102) with minimal hydrogen passivation of acceptors includes a p-type tunnel junction layer (106) of a first semiconductor material doped with carbon. The first semiconductor material includes aluminum, gallium, arsenic and antimony. An n-type tunnel junction layer (104) of a second semiconductor material includes indium, gallium, arsenic and one of aluminum and phosphorous. The junction between the p-type and an-type tunnel junction layers forms a tunnel junction (110).

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