Tunnel junction type josephson device

Details Tunnel junction type josephson device Tunnel junction type josephson device

1993-03-10

2000-12-05

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Tunneling through region of reduced conductivity

257 31, 257 35, 257661, 505190, H01L 2906, H01L 3922, H01L 3900

Patent

active

061570443

ABSTRACT:
A tunnel junction type Josephson device includes a pair of superconductor layers formed of a compound oxide superconductor material and an insulator layer formed between the pair of superconductor layers. The insulator layer is formed of a compound oxide which is composed of the same constituent elements as those of the compound oxide superconductor material of the superconductor layers but with an atomic ratio which does not present a superconductivity characteristics. In addition, the superconductor layers and the insulator layer are continuously formed while supplying oxygen.

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