Tunnel junction structure and its manufacture and magnetic senso

Details Tunnel junction structure and its manufacture and magnetic senso Tunnel junction structure and its manufacture and magnetic senso

1998-04-08

2000-08-29

Bowers, Charles

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

257421, 360113, 365158, H01L 2100, G11B 539

Patent

active

061107514

ABSTRACT:
A tunnel junction structure is provided. A first magnetic layer is formed on a support substrate. A tunnel insulating layer is disposed on the first magnetic layer, the tunnel insulating layer containing a metal element as a constituent. A second magnetic layer is disposed on the tunnel insulating layer. A diffusion preventing layer disposed between the first magnetic layer and the tunnel insulating layer. The diffusion preventing layer suppresses mutual diffusion between metal atoms in the first magnetic layer and metal atoms in the tunnel insulating layer. The tunnel insulating layer and the diffusion preventing layer each have a thickness allowing tunnel current to flow between the first and second magnetic layers.

REFERENCES:
patent: 5862022 (1999-01-01), Noguchi et al.
patent: 5986858 (1999-11-01), Sato et al.

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