Active solid-state devices (e.g. – transistors – solid-state diode – With metal contact alloyed to elemental semiconductor type... – In pn junction tunnel diode
Patent
1991-04-01
1992-11-24
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
With metal contact alloyed to elemental semiconductor type...
In pn junction tunnel diode
257 94, 257 96, 257 97, 257201, 257 79, 257104, H01L 3300
Patent
active
051667614
ABSTRACT:
A multiple wavelength LED having a monolithic cascade cell structure comprising at least two p-n junctions, wherein each of said at least two p-n junctions have substantially different band gaps, and electrical connector means by which said at least two p-n junctions may be collectively energized; and wherein said diode comprises a tunnel junction or interconnect.
REFERENCES:
patent: 3611069 (1971-10-01), Galginaitus et al.
patent: 3752713 (1973-08-01), Sakuta et al.
patent: 3938172 (1976-02-01), Lockwood
patent: 4296425 (1981-10-01), Nishizawa
Lynch et al, "Planar Beam-Lead Gallium Arsenide Electroluminescent Arrays", IEEE Transactions on Electron Devices, vol. ED-14, No. 10, Oct. 1967, pp. 705-709.
Shang, "PNPN Light Emitting Diode," IBM Technical Disclosure Bulletin, vol. 14, No. 4, Sep. 1971, 1325-1326.
Lockwood et al, "The GaAs P-N-P-N Laser Diode, " IEEE Journal of Quantum Electronics, Jul. 1974, pp. 567-569.
IEEE Transactions on Electron Devices, vol. ED-14, No. 10, (Oct. 1967), Lynch et al., pp. 705-709.
Kurtz Sarah R.
Olson Jerry M.
Midwest Research Institute
Mintel William
Richardson Ken
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