Tunnel junction multiple wavelength light-emitting diodes

Active solid-state devices (e.g. – transistors – solid-state diode – With metal contact alloyed to elemental semiconductor type... – In pn junction tunnel diode

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257 94, 257 96, 257 97, 257201, 257 79, 257104, H01L 3300

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active

051667614

ABSTRACT:
A multiple wavelength LED having a monolithic cascade cell structure comprising at least two p-n junctions, wherein each of said at least two p-n junctions have substantially different band gaps, and electrical connector means by which said at least two p-n junctions may be collectively energized; and wherein said diode comprises a tunnel junction or interconnect.

REFERENCES:
patent: 3611069 (1971-10-01), Galginaitus et al.
patent: 3752713 (1973-08-01), Sakuta et al.
patent: 3938172 (1976-02-01), Lockwood
patent: 4296425 (1981-10-01), Nishizawa
Lynch et al, "Planar Beam-Lead Gallium Arsenide Electroluminescent Arrays", IEEE Transactions on Electron Devices, vol. ED-14, No. 10, Oct. 1967, pp. 705-709.
Shang, "PNPN Light Emitting Diode," IBM Technical Disclosure Bulletin, vol. 14, No. 4, Sep. 1971, 1325-1326.
Lockwood et al, "The GaAs P-N-P-N Laser Diode, " IEEE Journal of Quantum Electronics, Jul. 1974, pp. 567-569.
IEEE Transactions on Electron Devices, vol. ED-14, No. 10, (Oct. 1967), Lynch et al., pp. 705-709.

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