Tunnel junction light emitting device

Details Tunnel junction light emitting device Tunnel junction light emitting device

2006-03-15

2009-12-29

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S094000, C257S103000

Reexamination Certificate

active

07638792

ABSTRACT:
A tunnel junction light emitting device according to the present invention is provided with an active layer and an electron tunneling region supplying the active layer with carriers. The electron tunneling region has a first p-type semiconductor layer, a second p-type semiconductor layer and an n-type semiconductor layer. The second p-type semiconductor layer is sandwiched between the first p-type semiconductor layer and the n-type semiconductor layer, and the first p-type semiconductor layer, the second p-type semiconductor layer and the n-type semiconductor layer form a tunnel junction to which a reverse bias is applied. An energy level at a valence band edge of the second p-type semiconductor layer is equal to or lower than an energy level at a valence band edge of the first p-type semiconductor layer.

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