Tunnel junction device having oxide ferromagnetic...

Details Tunnel junction device having oxide ferromagnetic... Tunnel junction device having oxide ferromagnetic...

2004-06-04

2009-12-15

Heinz, A. J. (Department: 2627)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

C257S421000, C365S158000

Reexamination Certificate

active

07633723

ABSTRACT:
To provide a tunnel junction device having a high MR ratio even at room temperature, a tunneling film as a nonmagnetic layer of three-layer structure of LaMnO3/SrTiO3/LaMnO3is arranged between a ferromagnetic metal material La0.6Sr0.4MnO3(12) and a ferromagnetic metal film material La0.6Sr0.4MnO3(14). The tunneling film comprises two unit layers of LaMnO3(13A) arranged on the ferromagnetic metal material La0.6Sr0.4MnO3(12); five unit layers of SrTiO3(13B); and two unit layers of LaMnO3(13C) arranged at the interface between the SrTiO3(13B) and the ferromagnetic metal film material La0.6Sr0.4MnO3(14).

REFERENCES:
patent: 6110751 (2000-08-01), Sato et al.
patent: 6760201 (2004-07-01), Nakashio et al.
patent: 2001-320108 (2001-11-01), None
Ogimoto, Y. et al., Tunneling Magnetoresistance above room temperature in La0-7Sr0MnO3/SrTiO3/La0-7Sr0-3MnO3Junctions, Japanese Journal of Applied Physics., vol. 42, Part 2, No. 4A, pp. L369 to L372, 2003.
U.S. Appl. No. 10/591,246, filed Aug. 31, 2006, Tokura, et al.

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