Tunnel junction device

Details Tunnel junction device Tunnel junction device

2005-02-25

2009-02-03

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C257S422000

Reexamination Certificate

active

07485937

ABSTRACT:
A tunnel junction device capable of controlling its spin retention is provided. The tunnel junction device includes a La0.6Sr0.4MnO3-δelectrode (12), a La0.6Sr0.4Mn1-yRuyO3-δelectrode (14), both as ferromagnetic (including ferrimagnetic) metal materials, and a LaAlO3-δ(electrically insulating layer) (13) arranged between the two electrodes (12) and (14).

REFERENCES:
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patent: 6556473 (2003-04-01), Saito et al.
patent: 2003/0001178 (2003-01-01), Hsu et al.
patent: 2000 357828 (2000-12-01), None
patent: 2001-320108 (2001-11-01), None
patent: 2003 068983 (2003-03-01), None
R. Cauro, Persistent and transient photoconductivity in oxygen-deficient La2/3Sr1/3MoO3-σ thin films, Apr. 10, 2001, The American Physical Society, 63, 6.
U.S. Appl. No. 10/591,246, filed Aug. 31, 2006, Tokura et al.
U.S. Appl. No. 10/569,089, filed Feb. 21, 2006, Tokura et al.

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