Tunnel injection of minority carriers in semi-conductors

Details Tunnel injection of minority carriers in semi-conductors Tunnel injection of minority carriers in semi-conductors

1977-10-28

1979-07-24

Tupman, W.

Metal working

Method of mechanical manufacture

Assembling or joining

29584, 20412935, B01J 1700

Patent

active

041618149

ABSTRACT:
Disclosed are multi-layer thin-film devices having adjacent insulator-semiconductor layers employing n-or-p-type semiconductors wherein a charge maintained at the insulator-semiconductor interface creates a depletion region that substantially suppresses tunneling of majority carriers while enhancing tunneling of minority carriers. When employed in a metal-insulator semiconductor (MIS) device wherein the semiconductor is a compound such as gallium arsenide (GaAs) or Cadmium Sulfide (CdS) such minority carrier injection substantially increases the luminescence efficiency.

REFERENCES:
patent: 3386163 (1968-06-01), Brennemann
patent: 3448353 (1969-06-01), Gallagher
patent: 3535598 (1970-10-01), Feist
patent: 3836990 (1974-09-01), Harth

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