Tunnel injection of minority carriers in semi-conductors

Details Tunnel injection of minority carriers in semi-conductors Tunnel injection of minority carriers in semi-conductors

1975-12-08

1977-12-27

Edlow, Martin N.

357 4, 357 17, 357 52, H01L 4902, H01L 3300

Patent

active

040657809

ABSTRACT:
Disclosed are multi-layer thin-film devices having adjacent insulator-semiconductor layers employing n-or-p-type semiconductors wherein a charge maintained at the insulator-semiconductor interface creates a depletion region that substantially suppresses tunneling of majority carriers while enhancing tunneling of minority carriers. When employed in a metal-insulator semiconductor (MIS) device wherein the semiconductor is a compound such as gallium arsenide (GaAs) or Cadmium Sulfide (CdS), such minority carrier injection substantially increases the luminescence efficiency.

REFERENCES:
patent: 3267317 (1966-08-01), Fischer
patent: 3353114 (1967-11-01), Hanks
patent: 3424934 (1969-01-01), Berglund
patent: 3462630 (1969-08-01), Cuthbert
patent: 3849707 (1974-11-01), Braslau

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