Miscellaneous active electrical nonlinear devices – circuits – and – Specific identifiable device – circuit – or system – Integrated structure
Reexamination Certificate
2007-10-03
2010-11-23
Zweizig, Jeffrey S (Department: 2816)
Miscellaneous active electrical nonlinear devices, circuits, and
Specific identifiable device, circuit, or system
Integrated structure
Reexamination Certificate
active
07839209
ABSTRACT:
A tunnel transistor includes source diffusion (4) of opposite conductivity type to a drain diffusion (6) so that a depletion layer is formed between source and drain diffusions in a lower doped region (8). An insulated gate (16) controls the position and thickness of the depletion layer. The device includes a quantum well formed in accumulation layer (20) which is made of a different material to the lower layer (2) and cap layer (22).
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“Silicon Surface Tunnel Transistor”; Applied Physics Letters, AIP, American Institute of Physics, Melville, NY, US; vol. 67, No. 4; Jul. 24, 1995; pp. 494-496; XP012014432; ISSN: 0003-6951.
Leburton, J.P., et al; “Bipolar Tunneling Field-Effect Transistor: A Three-Terminal Negative Differential Resistance Device for High-Speed Applications”; Applied Physics Letters; AIP; American Institute of Physics, Melville, NY, US; vol. 52, No. 19; May 9, 1988; pp. 1608-1610; XP000035703; ISSN: 0003-6951.
Agarwal Prabhat
Curatola Gilberto
Doornbos Gerben
Hurkx Godefridus A. M.
Slotboom Jan W.
NXP B.V.
Zweizig Jeffrey S
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