Tunnel emitter upper valley transistor

Details Tunnel emitter upper valley transistor Tunnel emitter upper valley transistor

1981-06-12

1983-08-02

Edlow, Martin H.

357 3, 357 4, 357 12, 357 16, H01L 2972, H01L 2726, H01L 2988, H01L 29205

Patent

active

043969313

ABSTRACT:
The invention is a three-terminal transistor structure having five layers of materials that in combination provide conduction by high mobility carrier transport across the base in an energy valley above the conduction band. The conduction is by majority carrier tunneling injection from the emitter and transport at an upper valley level across the base. The resulting structure is capable of switching in times of 10.sup.-12 seconds.

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