Tunnel emitter photocathode

Details Tunnel emitter photocathode Tunnel emitter photocathode

1975-05-30

1977-01-25

Edlow, Martin H.

357 30, 357 52, H01L 4902, H01L 2714

Patent

active

040054659

ABSTRACT:
A method of producing a tunnel emitter photocathode consisting of heating a emiconductor layer and then depositing a layer of aluminum oxide on one side thereof at a rapid rate and then baking out the wafer in a hydrogen gas atmosphere. After depositing electrical contacts on each side of the wafer, a metallic emitter layer is evaporated over the aluminum oxide layer with the metallic emitter layer treated with a low work function material such as cesium and oxygen to further increase the emission efficiency.

REFERENCES:
patent: 3184636 (1965-05-01), Dore
patent: 3493767 (1970-02-01), Cohen
patent: 3706920 (1972-12-01), Caldwell

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