Tunnel-effect superconductive detector cell

Details Tunnel-effect superconductive detector cell Tunnel-effect superconductive detector cell

1998-12-04

1999-10-12

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Tunneling through region of reduced conductivity

257 32, 257 35, 257 36, H01L 2906, H01L 3922

Patent

active

059659009

ABSTRACT:
The invention relates to a detector cell comprising tunnel-effect superconductive devices organized in a two-dimensional array and placed on a common substrate, each superconductive device comprising a tunnel-effect superconductive junction and being electrically connected to a bottom connection area and to a top connection area. The superconductive devices are separated from one another by trenches extending down to and including the bottom connection area and defining individual bottom connection areas disposed between each of said junctions and the substrate. At least one individual bottom connection area is electrically connected to at least one bottom connection area of an adjacent superconductive device by a localized bridge region.

REFERENCES:
patent: 4470190 (1984-09-01), Fulton et al.
patent: 5109164 (1992-04-01), Matsui
patent: 5753935 (1998-05-01), Kurakado et al.

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