Tunnel effect acceleration sensor

Details Tunnel effect acceleration sensor Tunnel effect acceleration sensor

1994-03-29

1995-07-11

Noland, Thomas P.

Measuring and testing

Speed, velocity, or acceleration

Acceleration determination utilizing inertial element

73517R, G01P 1513

Patent

active

054310512

ABSTRACT:
An acceleration sensor is produced on a silicon substrate by etching to leave a cantilevered beam of polysilicon with a tip on the substrate projecting toward this beam. Acceleration of the sensor causes the beam to bend, thereby changing the spacing between the tip and the beam, and thereby also changing the tunnel current, which is measured. Electrodes are provided that, given application of a potential thereto, effect an electrostatic compensation of the bending of the beam.

REFERENCES:
patent: 4638669 (1987-01-01), Chou
patent: 4891984 (1990-01-01), Fuji
patent: 5265470 (1993-11-01), Kaiser
"Self-Controlled Micromechanical Scanning Tunneling Microscopy Sensor", IBM Technical Disclosure Bulletin, vol. 32, No. 12, May 1990, pp. 49-51.
"Micromachined Silicon Tunnel Sensor for Motion Detection," Kenny et al., Appl. Phys. Lett. 58(1), Jan. 7, 1991, pp. 100-102.
"Electron Tunnel Sensors," Kenny et al., J. Vac. Sci. Technol. A 10(4), Jul./Aug., 1992, pp. 2114-2118.

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