Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1978-07-27
1980-12-30
Anagnos, Larry N.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
307213, 307286, 307311, 307322, 357 15, 357 22, 357 30, H03K 19094, H03K 3315, H03K 342, H01L 2980
Patent
active
042425956
ABSTRACT:
An active multi-terminal switching device such as a transistor in electric series connection with a tunnel diode load discharges, or charges, the output node between tunnel diode and transistor upon activating, or deactivating, the transistor by appropriate input signals. The negative current-voltage characteristics of the forward biased tunnel diode provides a large load resistance, and thus causes a low current level, during the stationary on-state of the transistor, but it also provides a small load resistance during most of the transient when the transistor is turned off, and thus causes a fast switching speed. A tunnel diode connected between gate and source of an enhancement mode n-channel GaAs junction field effect phototransistor enhances the recovery of the transistor after the activating light beam is switched off.
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Liechti, "GaAs FET Logic", Conf.: Proc. of 6th Int'l Symposium on GaAs & Related Cmpnds, (9/20-22/76), pp. 227-236.
Becker, "A Simple Light-sensitive Semiconductor Trigger Device", Exp. Tech. Phys. (Germany), vol. 23, No. 5, pp. 555-558, 1975.
Van Tuyl et al., "High-Speed Integrated Logic with GaAs MESFETS", IEEE-JSSC, vol. SC-9, No. 5, pp. 269-276, 10/1974.
Zuleeg et al., IEEE Trans. on Electron Devices, vol. ED-25, No. 6, pp. 628-639, 6/1978.
Anagnos Larry N.
University of Southern California
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