Tunnel diode detector for microwave frequency applications

Details Tunnel diode detector for microwave frequency applications Tunnel diode detector for microwave frequency applications

1991-11-04

1993-07-06

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437105, 437107, 437126, 437904, H01L 2120

Patent

active

052253694

ABSTRACT:
A tunnel diode is disclosed having a highly P-doped layer of indium gallium arsenide formed on a highly N-doped layer of indium gallium arsenide which is supported on a semi-insulating substrate of indium phosphide. In an alternative embodiment, a tunnel diode is disclosed which has a highly P-doped layer of indium gallium arsenide formed on a highly N-doped layer of indium gallium arsenide which is supported on an N-doped substrate.

REFERENCES:
patent: 4198644 (1980-04-01), Esaki
patent: 4471367 (1984-09-01), Chen et al.
patent: 4639752 (1987-01-01), Curtice
patent: 4794439 (1988-12-01), Webb et al.
patent: 4881979 (1989-11-01), Lewis

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