Tunnel device level shift circuit

Miscellaneous active electrical nonlinear devices – circuits – and – Signal converting – shaping – or generating – Amplitude control

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

Reexamination Certificate

active

07345523

ABSTRACT:
A floating gate circuit having a floating gate and a level shift circuit. A first tunneling device formed between a first and second tunnel electrode is included for removing electrons from the floating gate. Electrons are injected onto the floating gate without the use of a tunneling device, e.g., using avalanche injection. A first circuit is coupled to the floating gate for generating an output voltage at an output terminal. The level shift circuit has a second tunnel device coupled between the output terminal and the first tunnel electrode. The second tunnel device is for tracking changes in the characteristics of the first tunneling device connected to the floating gate. The level shift circuit level shifts the output of the floating gate circuit to a voltage that enables the tunnel device coupled to a floating gate to precisely set the floating gate to a desired voltage during a set mode.

REFERENCES:
patent: 3750115 (1973-07-01), Mundy
patent: 4752912 (1988-06-01), Guterman
patent: 4935702 (1990-06-01), Mead et al.
patent: 4953928 (1990-09-01), Anderson et al.
patent: 4980859 (1990-12-01), Guterman et al.
patent: 5059920 (1991-10-01), Anderson et al.
patent: 5095284 (1992-03-01), Mead
patent: 5166562 (1992-11-01), Allen et al.
patent: 5875126 (1999-02-01), Minch et al.
patent: 5903487 (1999-05-01), Wu et al.
patent: 5986927 (1999-11-01), Minch et al.
patent: 6297689 (2001-10-01), Merrill
patent: 6320790 (2001-11-01), Micheloni
patent: 6396739 (2002-05-01), Briner
patent: 6434051 (2002-08-01), Endo
patent: 6515903 (2003-02-01), Lee et al.
patent: 6847551 (2005-01-01), Owen
patent: 6914812 (2005-07-01), Owen
R. H. Fowler and Dr. L. Nordheim,Electron Emission in Intense Electric Fields, Royal Society Proceedings, A, vol. 119, pp. 173-181 (1928).
M. Lanzlinger and E.H. Snow;Fowler-Nordheim Tunneling Grown Si02, Journal of Applied Physics, pp. 278-283 (Jan. 1969).
L. Richard Carley, Trimming Analog Circuits Using Floating Gate Analog MOS Memory, IEEE Journal, vol. 24, No. 6, pp. 1569-1575 (Dec. 1989).
Paul Hasler, et al., Adaptive Circuits Using pFET Floating Gate Devices, pp. 1-5, (undated).
Migues Figueroa, et al., A Floating Gate Trimmable High-Resolution DAC in Standard 0.25 μm CMOS, Nonvolatile Semiconductor Memory Workshop, pp. 46-47, (Aug. 2001).
Rodriguez-Villegas, A 1-V Micropower Log-Domain Integrator Based on FGMOS Transistors Operating in Weak Inversion, IEEE Journal of Solid-State Circuits, vol. 39, No. 1, pp. 256-259, (Jan. 2004).
Yngar Berg, et al., Programming Floating Gate Circuits with UV-Activated Conductances, IEEE Transactions on Circuits and Systems, vol. 48, No. 1, pp. 12-19, (Jan. 2001).
Yngar Berg, et al., Ultra-Low-Voltage Floating-Gate Transconductance Amplifiers, IEEE Transactions on Circuits and Systems, vol. 48, No. 1, pp. 37-44, (Jan. 2001).
J. Ramirez-Anguloa, et al., Low-Voltage Circuits Building Blocks Using Multi-Input Floating-Gate Transistors, IEEE Transactions, vol. 42, No. 11, pp. 971-974 (Nov. 1995).
S. S. Rajput, et al., Low Voltage Analog Circuit Design Techniques, IEEE Circuits and Systems, First Quarter, vol. 2, No. 1, pp. 35-41 (2002).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Tunnel device level shift circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Tunnel device level shift circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Tunnel device level shift circuit will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3972801

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.