Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Reexamination Certificate
2006-06-27
2006-06-27
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
C257S661000
Reexamination Certificate
active
07067839
ABSTRACT:
It is an object to provide a tuning circuit which has large fractional frequency band width, for example frequency band of the return loss of less than −10 dB. The tuning circuit is composed of a superconductor microstrip lines, a superconductor distributed tunnel junction elements, a signal input part and a signal output part. It comprises at least a superconductor microstrip line and at least two superconductor tunnel junction elements, wherein the microstrip line and the tunnel junction element are connected alternately. The microstrip line and the tunnel junction element are half-wavelength of an input signal at a center frequency. A quarter-wavelength impedance transformer is comprised between a signal input part and a half-wavelength tunnel junction which is nearest to the signal input part.
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Uzawa Yoshinori
Wang Zhen
National Institute of Information and Communication Technology
Prenty Mark V.
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