Tungsten silicide/ tungsten polycide anisotropic dry etch proces

Details Tungsten silicide/ tungsten polycide anisotropic dry etch proces Tungsten silicide/ tungsten polycide anisotropic dry etch proces

1997-05-02

1999-01-05

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

216 67, 252 791, 438713, 438721, H01L 2100

Patent

active

058562397

ABSTRACT:
A process for anisotropically etching a tungsten silicide or tungsten polycide structure. If the silicide/polycide film has an overlying oxide layer, the insulating layer is removed by a gas mixture composed of CHF.sub.3 and C.sub.2 F.sub.6. The WSi.sub.x silicide layer is then etched in a reactive ion etch using a gas mixture formed from Cl.sub.2 and C.sub.2 F.sub.6, with sufficient O.sub.2 added to control polymer formation and prevent undercutting of the silicide. The polysilicon layer is then etched using a gas mixture formed from Cl.sub.2 and C.sub.2 F.sub.6. The result is a highly anisotropic etch process which preserves the critical dimension of the etched structures. The etch parameters may be varied to produce a tapered sidewall profile for use in the formation of butted contacts without the need for a contact mask.

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