Tungsten silicide self-aligned formation process

Details Tungsten silicide self-aligned formation process Tungsten silicide self-aligned formation process

1989-09-08

1991-12-24

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437192, 437198, 437 41, 148DIG19, 148DIG147, H01L 2144

Patent

active

050752510

ABSTRACT:
A process for forming tungsten or molybdenum silicide on silicon apparent regions (6) of a silicon wafer surface (1) also comprising oxidized regions (2) includes the steps consisting in uniformly coating the wafer with a tungsten or molybdenum layer (10) and annealing at a temperature ranging from 700.degree. C. to 1000.degree. C. The annealing step is carried out in presence of a low pressure gas forming a chemical composite with tungsten or molybdenum. The composite is then selectively etched.

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