Tungsten-silicide reoxidation technique using a CVD oxide cap

Details Tungsten-silicide reoxidation technique using a CVD oxide cap Tungsten-silicide reoxidation technique using a CVD oxide cap

1988-01-07

1988-09-27

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 43, 437238, 437239, 437200, 437161, 437193, 148DIG118, H01L 21316

Patent

active

047742011

ABSTRACT:
A tungsten silicide reoxidation technique for forming a reoxidation layer in a CMOS MOSFET device. After forming an insulated gate member, which has a tungsten silicide layer overlying a polysilicon layer, a CVD oxide layer is deposited on the exposed and crystallized tungsten silicide layer to function as a cap prior to the formation of the reoxidation layer. The CVD oxide layer operates to slow the passage of oxygen atoms to combine with the tungsten atoms of the silicide layer but allows free migration of silicon atoms from the polysilicon layer to the tungsten silicide surface and combine with the oxygen atoms in forming a substantially planarized and uncontaminated reoxidation layer without the requirement of a substantially pure nitrogen ambient.

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M. Ayukawa et al., "CVD WSix Oxidation Characteristics with Ion Implanation Method"; V-MIC Conf.; Jun. 15-16, 1978; pp. 314-320.

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