Tungsten polishing solution

Details Tungsten polishing solution Tungsten polishing solution

2006-11-07

2006-11-07

Goudreau, George A. (Department: 1763)

Compositions

Etching or brightening compositions

C252S079200, C252S079300, C252S079400

Reexamination Certificate

active

07132058

ABSTRACT:
A tungsten CMP solution for planarizing semiconductor wafers includes a primary oxidizer having a sufficient oxidation potential for oxidizing tungsten metal to tungsten oxide; and the tungsten CMP solution has a static etch rate for removing the tungsten metal. A secondary oxidizer lowers the static etch rate of the tungsten CMP solution. The secondary oxidizer is selected from the group consisting of bromates and chlorates. Optionally the tungsten CMP contains 0 to 50 weight percent abrasive particles; and it contains a balance of water and incidental impurities.

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