Tungsten disilicide CVD

Details Tungsten disilicide CVD Tungsten disilicide CVD

1990-05-04

1990-10-30

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG147, 437196, H01L 21443

Patent

active

049668692

ABSTRACT:
Tungsten disilicide (WSi.sub.x) films are deposited onto doped or undoped polysilicon by reducing WF.sub.6 with a mixture of dichlorosilane (SiH.sub.2 Cl.sub.2) and disilane (Si.sub.2 H.sub.6). The addition of disilane provides a mechanism for increasing the resistivity (silicon to tungsten ratio) of the film without adversely affecting the uniformity or deposition rate of the film. A high silicon to tungsten ratio prevents degradation of the silicide film and the underlaying polysilicon film during subsequent growth of an oxide (SiO.sub.2) dielectric. The excess silicon in the film also provides desirable etching and annealing characteristics.

REFERENCES:
patent: 4501769 (1985-02-01), Hieber et al.
patent: 4692343 (1987-09-01), Price et al.
patent: 4737474 (1988-04-01), Price et al.
patent: 4902645 (1990-02-01), Ohba

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