Tungsten barrier contact

Details Tungsten barrier contact Tungsten barrier contact

1981-12-28

1984-10-23

Smith, John D.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 84, 427 91, 427 93, H01L 21285

Patent

active

044788819

ABSTRACT:
A semiconductor contact has a thin barrier layer less than 500 angstroms in thickness of a metal such as tungsten applied between an aluminum contact layer and a metal-semiconductor compound. The metal semiconductor compound forms a junction with an underlying semiconductor substrate. The thin barrier prevents a chemical reaction between the aluminum of the contact layer and the metal of the metal-semiconductor compound.

REFERENCES:
patent: 3562604 (1971-02-01), VanLaer
patent: 3906540 (1975-09-01), Hollins
patent: 4310568 (1982-01-01), Howard

Affiliated with

Also associated with

Rating

Tungsten barrier contact does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Tungsten barrier contact, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Tungsten barrier contact will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1599114