Tuned bandwidth photocathode for transmission negative...

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission

Reexamination Certificate

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Details

C257S011000, C257S009000, C257S021000, C257S043000, C257S184000, C257S185000, C313S542000, C313S34600R, C313S366000, C438S020000

Reexamination Certificate

active

06998635

ABSTRACT:
A photocathode includes a first layer having a first energy band gap for providing absorption of light of wavelengths shorter than or equal to a first wavelength, a second layer having a second energy band gap for providing transmission of light of wavelengths longer than the first wavelength, and a third layer having a third energy band gap for providing absorption of light of wavelengths between the first wavelength and a second wavelength. The first wavelength is shorter than the second wavelength. The first, second and third layers are positioned in sequence between input and output sides of the photocathode.

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