Active solid-state devices (e.g. – transistors – solid-state diode – Voltage variable capacitance device
Reexamination Certificate
2006-04-18
2006-04-18
Kang, Donghee (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Voltage variable capacitance device
C257S600000, C257S602000, C361S277000, C361S281000, C361S282000, C361S290000
Reexamination Certificate
active
07030463
ABSTRACT:
Electrically tunable electromagnetic bandgap (“TEBG”) structures using a ferroelectric thin film on a semiconductor substrate, tunable devices that include such a TEBG structure, such as a monolithic microwave integrated circuit (“MMIC”), and a method producing such a TEBG structure are disclosed. The present invention provides a semiconductive substrate having an oxide layer, a first conductive layer positioned on the oxide layer, a ferroelectric layer covering the first conductive layer, and a second conductive layer positioned on a surface of the tunable ferroelectric layer. The use of the ferroelectric layer, which have a DC electric field dependent permittivity, enables a small size, tunable EBG structure.
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Gevorgian Spartak
Subramanyam Guru
Dinsmore & Shohl LLP
Kang Donghee
University of Dayton
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