Tunable wavelength laser

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With light activation

Reexamination Certificate

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Details

C372S020000, C372S044010

Reexamination Certificate

active

07112827

ABSTRACT:
A light oscillation part including an active layer for generating light by current injection, a tuning layer with an intermediate layer formed between the active layer and the tuning layer, for varying an oscillation wavelength by current injection and a diffraction grating formed near the active layer and the tuning layer, and a light amplification part including an active layer for amplifying light by current injection are formed on a semiconductor substrate. Light oscillation elements having wide wavelength variation ranges and the light amplification are integrated on a semiconductor substrate, whereby wide wavelength variation ranges can be obtained and the output light can be much increased.

REFERENCES:
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patent: 6693937 (2004-02-01), Steffens
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patent: 7-135368 (1995-05-01), None
patent: 7-326820 (1995-12-01), None
patent: 2002-6352 (2002-01-01), None
Wolf, T., et al., “Tunable Twin-Guide Lasers with Improved Perforemance Fabricated by Metal-Organic Vapor Phase Epitaxy”, Mar. 1993, IEEE Photonics Tech. Letters, vol. 5, No. 3, p. 273-275.
Schmidt et al., “Design and Realization of a Buried-Heterostructure Turnable-Twin-Guide Laser Diode with Electrical Blocking Regions”,IEEE Journal of Quantum Electronics, vol. 35, No. 5, May 1999, pp. 794-802.
Bouda et al., “Compact High-Power Wavelength Selectable Lasers for WDM Applications”,Optical Fiber Communication Conference, 2000, Technical Digest, vol. 1, pp. 178-180.
Mason et al., “Design of Sampled Grating DBR Lasers with Integrated Semiconductor Optical Amplifiers”,IEEE Photonics Technology Letters, vol. 12, No. 7, Jul. 2000, pp. 762-764.

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